sm d t yp e i c ww w .kexin.com.c n 1 sm d t yp e mosfe t 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1 . gat e 2 . s ourc e 3 . d r a i n absolute maximum r atings ta = 25 t i n u g n i t a r l o b m y s r e t e m a r a p v e g a t l o v e c r u o s - n i a r d d s 20 v v e g a t l o v e c r u o s - e t a g g s 10 v drain-current -continuous * t j =125 i d 3.8 a i d e s l u p - d m 15 a p * n o i t a p i s s i d r e w o p d 1.25 w therma l r esistance, j unction - to-ambien t r thj a 100 /w operating j unction and storage temperature range tj.tstg - 55 to 150 * s urface mounted on f r 4 b oard ,t 1 0 sec . n-channel enhancement m ode field effect transistor features v d s =2 0v ,r ds(on) = 40 m @v g s = 4. 5 v, i d =5.0a v d s =2 0v ,r ds(on) = 60 m @v g s = 2. 5 v, i d =4.0a v d s =2 0v ,, r ds(on) = 75 m @v g s = 1. 8 v, i d =1.0a si2 3 0 0 ( k i 2 3 0 0 )
w w w . k exi n . c o m . c n 2 s m d ty p e i c s m d ty p e m os f e t electrical characteristic s ta = 25 t i n u x a m p y t n i m s n io t i d n o c t s e t l o b m y s r e t e m a r a p drain-sourc e breakdow n v oltage v dss v g s = 0v , i d v 0 2 a u 0 5 2 = zero gate voltage drain curren t i dss v d s =2 0v , v g s a u 1 v 0 = i e g a k a e l y d o b - e t a g g s s v g s = 10v,v d s = 0 v 100 na v * e g a t l o v d l o h s e r h t e t a g g s ( t h ) v g s = v d s ,i d v 5 . 1 8 7 . 0 6 . 0 a u 0 5 2 = v g s =4 .5v ,i d 0 4 2 3 a 0 . 5 = m v g s =2 .5v ,i d 0 6 0 5 a 0 . 4 = m v g s =1 .8v ,i d 5 7 2 6 a 0 . 1 = m i * t n e r r u c n i a r d e t a t s - n o d ( on ) v d s = 5v , v g s a 8 1 v 5 . 4 = g * e c n a t c u d n o c s n a r t d r a w r o f f s v d s = 5v , i d s 5 a 5 = c e c n a t i c a p a c t u p n i i s s 888 pf c e c n a t i c a p a c t u p t u o o s s 144 pf c e c n a t i c a p a c r e f s n a r t e s r e v e r rss 115 pf t e m i t y a l e d n o - n r u t d ( o n ) 31.8 ns t e m i t e s i r r 14.5 ns t e m i t y a l e d f f o - n r u t d ( o f f ) 50.3 ns t e m i t l l a f f 31.9 ns q e g r a h c e t a g l a t o t g 16.8 nc q e g r a h c e c r u o s - e t a g g s 2.5 nc q e g r a h c n i a r d - e t a g g d 5.4 nc drain-sourc e diod e forw ard curren t * i s 1.25 a v e g a t l o v d r a w r o f e d o i d s d v g s = 0v , i s v 2 . 1 5 2 8 . 0 a 5 2 . 1 = * p u l s e t e s t : p u l s e w id t h 300 s , dut y cy c l e 2% v d s = 10v , i d = 3.5a ,v g s = 4.5v r ds(on) drain - s ourc e on-st at e res ist anc e * v d d =1 0v , i d = 1a , v g s =4 .5v ,r l = 1 0 ,r g e n = 6 v d s = 15v , v g s = 0v,f = 1.0mhz si2 3 0 0 ( k i 2 3 0 0 ) mar k ing m ar k i ng 00a*
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